The present invention provides a radiation-sensitive composition and a pattern formation method with which it is possible to form a resist film in which development defects can be minizied and sensitivity and CDU can be exhibited at a sufficient level when a next-generation technology is applied. The present invention also provides a radiation-sensitive acid generation agent that can be applied to the radiation-sensitive composition. The radiation-sensitive composition contains a polymer (A) containing structural units (I) having an acid dissociable group, and a solvent (C), the radiation-sensitive composition meeting criteria (i) and/or (ii) below. (i) Contains a radiation-sensitive acid generator (B) containing a first organic acid anion and a first onium cation, the first onium cation containing a halogen-free electron-withdrawing group that contains no halogen atoms, and the first organic acid anion being a sulfonic acid anion that contains an iodine atom. (ii) The polymer (A) is a radiation-sensitive acid-generating polymer (A1) containing structural units (IV) having a second organic acid anion and a second onium cation, the second onium cation containing a halogen-free electron-withdrawing group that contains no halogen atoms, and the second organic acid anion being a sulfonic acid anion that contains an iodine atom.
- 출원번호 : JP2024/022037
- 출원인 : JSR CORPORATION
- 특허번호 :
- IPC : G03F-007/004(2006.01);C08F-220/10(2006.01);G03F-007/20(2006.01);G03F-007/039(2006.01);