Provided are: a resist underlayer film-forming composition that is capable of forming a resist underlayer film that can impart excellent pattern rectangularity to a resist pattern; and a method for producing a semiconductor substrate. The method for producing a semiconductor substrate comprises: a step for directly or indirectly coating a substrate with a resist underlayer film-forming composition; a step for forming a resist film on the resist underlayer film formed by the aforementioned step for coating a resist underlayer film-forming composition; a step for exposing the resist film to radiation; and a step for developing at least the exposed resist film. The resist underlayer film-forming composition contains a polymer and a solvent. The polymer contains a repeating unit (1) having an organosulfonate anion moiety and an onium cation moiety, a repeating unit (2) represented by formula (2), and a repeating unit (3) represented by formula (3). (In formula (2), R is a group selected from the group consisting of groups represented by any of formulas (2-1) to (2-8).) (In formula (3), R is a group that contains a substructure represented by formula (3-1) or (3-2).) (In formulas (3-1) and (3-2), X and X are each independently an oxygen atom, a sulfur atom, or a nitrogen atom. A formula in which a solid line and a broken line are combined indicates a single bond or a double bond each independently.)
- 출원번호 : JP2024/026067
- 출원인 : JSR CORPORATION
- 특허번호 :
- IPC : G03F-007/11(2006.01);C08F-220/38(2006.01);C08F-228/02(2006.01);G03F-007/095(2006.01);H01L-021/027(2006.01);