A fabric includes a first flexible fabric layer, having fabric emissivity properties in a visible radiation range that are selected so as to mimic ambient emissivity properties of a deployment environment of the fabric, and at least one second flexible fabric layer, which is joined to the first flexible fabric layer, and which is configured to scatter long-wave radiation that is incident on the fabric. The first and second flexible fabric layers are perforated by a non-uniform pattern of perforations extending over at least a part of the fabric.

• 출원번호 : 18811968
• 출원인 : Morag, Elad
• 특허번호 :
• IPC : F41H-003/02(2006.01);B32B-005/02(2006.01);B32B-015/095(2006.01);B32B-015/14(2006.01);B32B-033/00(2006.01);B32B-038/00(2006.01);B32B-038/04(2006.01);B32B-043/00(2006.01);C03C-011/00(2006.01);C03C-017/06(2006.01);D03D-001/00(2006.01);D03D-013/00(2006.01);D03D-015/283(2006.01);D03D-015/41(2006.01);D03D-015/47(2006.01);

A method for isolating plastic products produced by polymerization of resin with proton beams is disclosed. The method comprises a liquid resin added with a reactive dye that changes from transparent or colorless to color when activated by the proton beam or the chemical polymerization process to reveal polymerization within a polymerizable resin. The change in color is correlated to the energy delivered to the resin by a proton beam, electromagnetic radiation, or heat. The reactive dye is placed into a plastic container. The proton beam is directed into the container to polymerize the resin. When irradiation is complete, the container of frozen resin is opened at the top and bottom and placed on top of the column of water containing a density gradient provided by dissolved salt. The partially cured product is fully cured while suspended in the density gradient by application of heat or ultraviolet radiation.

• 출원번호 : 18811853
• 출원인 : Parris, George Edward
• 특허번호 :
• IPC : C08K-003/30(2006.01)

InxAlyGa1-x-yN semiconductor structures having optoelectronic elements characterized by epitaxial layers having different in-plane a-lattice parameters and different InN mole fractions are disclosed. The active regions are configured to emit radiation in different wavelength ranges and are characterized by strain states within about 1% to 2% of compressive strain. The epitaxial layers are grown on patterned InxAlyGa1-x-yN seed regions on a single substrate, where the relaxed InGaN growth layers provide (0001) InxAlyGa1-x-yN growth surfaces characterized by different in-plane a-lattice parameters and different InN mole fractions. InxAlyGa1-x-yN semiconductor structures can be used in optoelectronic devices such as in light sources for illumination and in display applications.

• 출원번호 : 18812553
• 출원인 : KRAMES, MICHAEL R.
• 특허번호 :
• IPC : H01L-027/15(2006.01)

A method and system for checking a gauge response is described. The method includes positioning samples with known profiles and uniform compositions between a radiation source and a subset of detectors in a detector array linearly arranged in a first direction. Sample signals are generated by irradiating the samples with radiation from the radiation source and detecting radiation transmitted through the samples and to the subset of detectors. The method includes inputting the sample signals into calibrations for each of the subset of detectors and each of the one or more samples, thereby determining values corresponding to each of the one or more samples and each of the subset of detectors. The method determines if the values corresponding to the one or more samples are consistent with the know values of the samples, and thereby provides an indication as to the state of calibration of the gauge.

• 출원번호 : 18812779
• 출원인 : WATSON, Carter
• 특허번호 :
• IPC : G01N-023/04(2006.01)

An organotin photoresist composition for photolithography patterning is described, wherein organotin photoresist composition comprises a (stannocenyl oxide) tin compound, a solvent, and/or an additive. (Stannocenyl oxide) tin compound comprises cyclopentadienyl C5H5 group, or substituted cyclopentadienyl C5H4R, C5H3R2, C5H2R3, C5HR4, or C5R5 group. A method for photolithography patterning comprises depositing (stannocenyl oxide)tin compound photoresist composition over a substrate to form a photoresist layer; exposing the (stannocenyl oxide)tin photoresist layer to actinic radiation to form a latent pattern; and developing the latent pattern by applying a developer to remove the unexposed or exposed portion of photoresists to form a photolithography pattern.

• 출원번호 : 18812202
• 출원인 : Lu, Feng
• 특허번호 :
• IPC : G03F-007/004(2006.01);G03F-007/16(2006.01);

A method for isolating plastic products produced by polymerization of resin with proton beams is disclosed. The method comprises a liquid resin added with a reactive dye that changes from transparent or colorless to color when activated by the proton beam or the chemical polymerization process to reveal polymerization within a polymerizable resin. The change in color is correlated to the energy delivered to the resin by a proton beam, electromagnetic radiation, or heat. The reactive dye is placed into a plastic container. The proton beam is directed into the container to polymerize the resin. When irradiation is complete, the container of frozen resin is opened at the top and bottom and placed on top of the column of water containing a density gradient provided by dissolved salt. The partially cured product is fully cured while suspended in the density gradient by application of heat or ultraviolet radiation.

• 출원번호 : 18811853
• 출원인 : Parris, George Edward
• 특허번호 : 12275833
• IPC : C08K-003/30(2006.01);C08G-061/04(2006.01);

PROBLEM TO BE SOLVED: To provide a light irradiating method and an illuminating device for raising plant which can accelerate growth of a plant and maintain vigor, and also enhance appearance of the plant.SOLUTION: In a light irradiating method for raising a plant, a plant is irradiated with white light and red light by using a white light-emitting diode 11 which emits white light and a red light-emitting diode 12 or a red phosphor which emits red light, the radiation energy of red light emitted from the red light-emitting diode 12 or the red phosphor is controlled to be 1/2 or less of the radiation energy of white light emitted from the white light-emitting diode 11, and at least one of an irradiation range, an irradiation direction and illuminance of white light and red light is controlled in accordance with at least one of a size, a shape and a growth stage of the plant, by which any mode is determined out of a mode of suppressing generation of fallen leaves while accelerating growth of the plant, a mode of maintaining vigor of the plant, and a mode of suppressing generation of fallen leaves while maintaining vigor of the plant, and the determined mode is executed.SELECTED DRAWING: Figure 4

• 출원번호 : 2024141058
• 출원인 : PANASONIC IP MANAGEMENT CORP
• 특허번호 :
• IPC : A01G-007/00(2006.01)

PROBLEM TO BE SOLVED: To provide a neutron capture therapy system that reduces the potential safety hazards caused by radiation for workers.SOLUTION: A neutron capture therapy system pertaining to the present application includes a vacuum tube transporting the charged particle beam, a neutron generating part to generate the neutron beam and a beam shaping part to shape the neutron beam. The beam shaping part is provided with an accommodating part. The neutron generating part is disposed at an end of the vacuum tube. The vacuum tube has a first position and a second position. The neutron capture therapy system further includes a removal device, which includes a moving part that drives the vacuum tube to move. The moving part has a third position and a fourth position. When the moving part is in the third position, the vacuum tube is in the first position. When the moving part is in the fourth position, the vacuum tube is in the second position, and the neutron generating part is located at the outer side of the beam shaping assembly, thereby reducing the direct contact between a worker and the neutron generating part after the nuclear reaction has occurred.SELECTED DRAWING: Figure 4

• 출원번호 : 2024141048
• 출원인 : NEUBORON THERAPY SYSTEM LTD
• 특허번호 :
• IPC : A61N-005/10(2006.01);G21G-004/02(2006.01);G21K-001/00(2006.01);G21K-005/08(2006.01);

• 출원번호 : 24195793.5
• 출원인 : Commissariat àl'Energie Atomique et aux EnergiesAlternatives;
• 특허번호 :
• IPC : G02B-001/00(2006.01);G02B-005/20(2006.01);G02B-005/28(2006.01);

결합 친화성 및 종양 흡수가 향상된 인간화 모노클로날 항-핵 항체가 제시된다. 특히 바람직한 항체는 비-인간화 비-돌연변이 형태에 비하여 친화성이 최대 약 8배 개선된 H-CDR3의 위치-지정 돌연변이체이다. 추가의 바람직한 양태에서, 이러한 인간화 항체는 면역 조절제, 면역 이펙터 및 다른 치료제 또는 진단제의 종양 괴사 표적화된 전달에 사용된다.

• 출원번호 : 10-2024-7027978
• 출원인 : 캔서 테라퓨틱스 래버러토리즈 인코포레이티드
• 특허번호 :
• IPC : C07K-016/44;A61K-039/00;A61K-047/68;A61K-051/10;