A method includes: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film; applying a composition for forming a resist film to the resist underlayer film to form a resist film; exposing the resist film to radiation; and developing the exposed resist film. The composition for forming a resist underlayer film includes: a polymer including a partial structure represented by formula (i); and a solvent. In the formula (i), Y1 is a sulfonyl group, a carbonyl group, or an alkanediyl group; Y2 is a sulfonyl group, a carbonyl group, or a single bond; when Y1 is an alkanediyl group, Y2 is a sulfonyl group or a carbonyl group, and when Y2 is a single bond, Y1 is a sulfonyl group or a carbonyl group; R1 is a monovalent organic group having 1 to 20 carbon atoms.
- 출원번호 : 18636755
- 출원인 : JSR CORPORATION
- 특허번호 :
- IPC : G03F-007/11(2006.01);G03F-007/075(2006.01);G03F-007/32(2006.01);H01L-021/027(2006.01);