본문 바로가기

Report

All 525,480 Page 41/52,548

검색
  • 525080

    wo

    The invention relates to an RFID method comprising the following method steps: a) transmitting at least one RFID transmission radiation of an RFID transmission unit into an RFID transmission field in which a plurality of RFID transponders are located; b) converting the RFID transmission radiation into RFID transponder radiation using at least one RFID transponder, wherein the RFID transponder radiation contains RFID transponder information relating to the RFID transponder; c) receiving the RFID transponder radiation using at least one RFID receiving unit; d) grouping the RFID transponders into RFID transponder groups on the basis of the RFID transponder information of the received RFID transponder radiation; e) selecting an RFID transponder group representative of at least one of the RFID transponder groups; f) determining at least one RFID transponder parameter of the RFID transponder group representative; g) assigning the RFID transponder parameter of the RFID transponder group representative to at least one other member of the RFID transponder group of the RFID transponder group representative. The invention also relates to an RFID device for carrying out the RFID method, comprising at least one RFID transmission unit for carrying out step a) of the RFID method, at least one RFID receiving unit for carrying out step c) of the RFID method, and at least one RFID evaluation unit for carrying out at least one of steps d) to g) of the RFID method. The invention further relates to a computer program product for carrying out at least one of steps a) to g) of the RFID method
    • 출원번호 : EP2025/074122
    • 출원인 : SIEMENS AKTIENGESELLSCHAFT
    • 특허번호 :
    • IPC : G06K-007/10(2006.01)
  • 525079

    wo

    A solar-powered waste treatment system comprising a waste treatment vessel with interior chamber for processing waste material, and reflective elements configured to concentrate solar radiation onto the vessel to elevate internal temperature. The system includes adjustment means for optimizing solar radiation concentration based on varying conditions, thermal retention means for minimizing heat loss, and supplemental heating means providing thermal energy when solar radiation is insufficient. Temperature control means maintain predetermined conditions for optimal biological waste processing. The system features modular construction enabling disassembly and deployment in remote locations, with gas processing means treating generated gases before atmospheric release. Multiple processing chambers facilitate sequential waste treatment stages. The reflective elements comprise mirror panel assemblies with enhanced reflectivity coatings mounted on exterior surfaces and positioned to focus solar radiation onto predetermined heating zones, maintaining optimal temperatures for efficient waste decomposition in extreme environmental conditions including high-altitude and cold climate regions.
    • 출원번호 : IN2025/051338
    • 출원인 : GUPTA, Mohit;MANGLA, Ritu;
    • 특허번호 :
    • IPC : C02F-011/18(2006.01);E03D-009/12(2006.01);F24S-030/00(2018.01);F24S-020/00(2018.01);C12M-001/00(2006.01);
  • 525078

    wo

    This radiation-sensitive composition comprises a polymer having an acid dissociable group and a compound represented by formula (1). In formula (1), X is *-SO-NH- or *-NH-SO-. * denotes an atomic bond with R. With respect to R and A, R is a monovalent organic group and A is a divalent organic group, or alternatively, R and A are combined with each other to form a group having a ring structure that contains -SO-NH- in the ring skeleton. M is a substituted or unsubstituted iodonium cation or a sulfonium cation that has at least one group selected from the group consisting of a fluoro group, a bromo group, an iodo group, a haloalkyl group, a cyano group, a carbonyl group and a sulfonyl group. However, in cases where M is an unsubstituted iodonium cation, A has an aromatic ring.
    • 출원번호 : JP2025/029777
    • 출원인 : JSR CORPORATION
    • 특허번호 :
    • IPC : G03F-007/004(2006.01);C07C-025/18(2006.01);C07C-311/08(2006.01);C07C-311/11(2006.01);C07C-311/48(2006.01);C07C-311/51(2006.01);C07C-381/12(2006.01);C07D-275/06(2006.01);C07D-317/24(2006.01);C07D-317/70(2006.01);G03F-007/20(2006.01);G03F-007/039(2006.01);
  • 525077

    wo

    A field-effect transistor is radiation-hardened against single-event effects. A method of making such a device is also disclosed. A device hardened against a single-event burnout effect includes a doped substrate, an epitaxial drift region, and a buffer layer located between the drift layer and the substrate. The substrate has a first dopant concentration, the epitaxial layer has a second dopant concentration that is less than the first dopant concentration, and the buffer layer has a third dopant concentration between the first and second dopant concentrations. The third dopant concentration within the buffer layer increases in a stepped or graded manner from the drift region to the substrate.
    • 출원번호 : US2025/043354
    • 출원인 : MICROCHIP TECHNOLOGY INCORPORATED
    • 특허번호 :
    • IPC : H10D-030/66(2025.01);H10D-062/13(2025.01);H10D-062/832(2025.01);H10D-064/27(2025.01);H10D-062/60(2025.01);
  • 525076

    wo

    The invention relates to a cast film consisting of a polypropylene composition comprising a) at least 90 wt.-% (based on the overall weight of the polyolefin composition) of at least one first polypropylene homopolymer (PPH-1) having a molecular weight distribution index Mw/Mn measured by GPC (according to ISO 16014-4:2003 and ASTM D 6474-99) in the range of 2.0 to 5.0, a MFR (ISO1133, 2.16 kg load at 230 °C) between 1.0 and 15 g/10 min, a sum of 2,1- insertion in the range of 0.3 to 1.5 mol% (determined by C nuclear magnetic resonance (NMR) spectroscopy), b) 0.1 – 10 wt.-% (based on the overall weight of the polyolefin composition) of at least one second polypropylene (PPH-2) having a MFR (ISO1133, 2.16 kg load at 230 °C) between 0.5 and 20 g/10 min, a melting point determined by differential scanning calorimetry (DSC, ISO ISO 11357 / part 3 / method C2) of at least 160 °C and a crystallization point (DSC) of at least 120°C, c) optionally at least one additive, wherein the sum of all ingredients always adds up to 100 wt.-%. The invention relates also to the use of said cast film in pharmaceutical packaging systems.
    • 출원번호 : EP2025/074140
    • 출원인 : BOREALIS GMBH
    • 특허번호 :
    • IPC : C08L-023/12(2006.01);C08F-110/06(2006.01);B65D-075/00(2006.01);
  • 525075

    us

    An alloy consisting of bismuth, tin and antimony is described. In embodiments, the alloy may comprise substantially Sn=3.4-9.8 at % (2.0 %-6.0 % by weight), Sb=4.3-4.8 at % (2.6 %-2.9 % by weight), and Bi=85.6-92.4 at % (91.2 %-95.5 % by weight). Indium may replace the tin component. The alloy may be used as a radiation shield. A process for preparing and forming the alloy is described.
    • 출원번호 : 19308515
    • 출원인 : Gatan, Inc.
    • 특허번호 :
    • IPC : G21F-001/08(2006.01);C22C-001/02(2006.01);C22C-028/00(2006.01);
  • 525074

    wo

    Low emissivity films have a substrate layer and a multi-layer construction disposed on the substrate layer. The multi-layer construction has (layer 1) a poly-5 (meth)acrylate layer, (layer 2) a silicon compound layer, (layer 3) a zinc tin oxide layer, (layer 4) a reflective metal layer of silver or a silver alloy, (layer 5) a zinc tin oxide layer, (layer 6) a silicon compound layer, and (layer 7) a radiation-cured hardcoat layer with a thickness of from 350 to 1,200 nanometers. The hardcoat layer is either a poly- (meth)acrylate, a polyurethane, or a multi-layer construction comprising a 0 poly(meth)acrylate-based sublayer and a polyolefin-based sublayer, The film has an emissivity of less than 0.3, and the film is scratch resistant and corrosion resistant.
    • 출원번호 : IB2025/058546
    • 출원인 : 3M INNOVATIVE PROPERTIES COMPANY
    • 특허번호 :
    • IPC : C08J-003/28(2006.01);B32B-027/30(2006.01);C08J-007/04(2020.01);C08J-007/046(2020.01);B32B-027/08(2006.01);C08K-003/22(2006.01);C09J-007/29(2018.01);C23C-014/06(2006.01);C23C-014/08(2006.01);C23C-014/28(2006.01);C23C-014/35(2006.01);G02B-005/20(2006.01);G02B-001/11(2015.01);G02B-005/26(2006.01);
  • 525073

    us

    A radiation image capturing device including an image capturing region in which pixels are arranged, signal lines, a signal processor, and a driver is provided. The pixels include image capturing pixels and detection pixels for acquiring irradiation information. The image capturing region includes receptor fields each constituted by a predetermined number of pixels which are continuous in a row direction and a column direction. Each receptor field includes detection regions each including one or more detection pixel, the detection regions being connected to different signal lines for each of detection regions in each receptor field. The signal processor acquires the irradiation information based on signals supplied from detection pixels arranged in each of the detection regions by causing the driver to drive detection pixels which are arranged in a receptor field set for acquisition of the irradiation information.
    • 출원번호 : 19308537
    • 출원인 : KAWANABE, JUN
    • 특허번호 :
    • IPC : G01T-001/24(2006.01)
  • 525072

    wo

    A device useful for image processing including a scattering medium patterned for angle dependent scattering of electromagnetic radiation encoding a plurality of different spatial frequency filtering operations on different diffraction orders, polarization states, or wavelengths of electromagnetic radiation incident on the scattering medium from an object, so that an image of the object formed from the electromagnetic radiation encoded by the scattering medium is processed by each of the different spatial frequency filtering operations in parallel.
    • 출원번호 : US2025/043369
    • 출원인 : CALIFORNIA INSTITUTE OF TECHNOLOGY
    • 특허번호 :
    • IPC : G06T-001/20(2006.01);G02B-001/00(2006.01);G02B-005/18(2006.01);G02B-005/30(2006.01);G06T-005/70(2024.01);G06T-005/20(2006.01);G06T-007/181(2017.01);
  • 525071

    wo

    Composition and Method of Preparation for Oxidized Regenerated Cellulose Powder as Haemostat ensures rapid haemotasis and stable clot formation. The process begins with cutting ORC fabric (1) into uniform sizes, followed by grinding it into a fine powder using a high-speed grinding machine operating at over 5000 r.p.m. for 10 to 20 minutes. The ground ORC powder is then mixed with wetting/Binding agent (2) (0.9% NaCl solution) in a 1:16 mass ratio to create a uniform blend, which is pressurized into cylindrical shapes. These structures are vacuum dried at 35°C ± 5°C for 12 to 16 hours, followed by ball milling at 50-100 r.p.m. for 4 to 6 hours. An automatic vibro separator classifies the particles into size ranges of 0- 1000 and the processed ORC powder (3) is filled into sterile Micro Enema bellow bottles, sealed with cannulas, packaged, and sterilized using gamma radiation to ensure product sterility and integrity.
    • 출원번호 : IN2025/051315
    • 출원인 : AEGIS LIFESCIENCES PRIVATE LIMITED
    • 특허번호 :
    • IPC : A61K-031/717(2006.01);A61L-015/28(2006.01);A61P-007/04(2006.01);A61P-017/02(2006.01);