A radial uniform-irradiation device and method for large-dimension monocrystalline silicon. The radial uniform-irradiation device for large-dimension monocrystalline silicon comprises: a bucket body, in which silicon ingots to be irradiated can be placed; a neutron shielding layer, arranged on the outer side of the bucket body and used for preventing neutrons from entering the bucket body, the circumference of the neutron shielding layer being provided with gaps, and the gaps being used for enabling neutrons to enter the bucket body, so as to form neutron flux areas; a reflection block, arranged at ends of silicon ingots, neutrons entering the reflection block through the gaps, and after being scattered, irradiating the silicon ingots from the end surfaces of the reflection block; and a rotation driving mechanism, provided in the bucket body and used for driving the silicon ingots to rotate. Arranging the neutron shielding layer and the reflection block at the external position of monocrystalline silicon changes the position and direction of neutrons entering silicon ingots; and rotating the silicon ingots in cooperation during irradiation achieves radial uniformity of irradiation doping for large-dimension monocrystalline silicon.
- 출원번호 : CN2024/107489
- 출원인 : SHANGHAI NUCLEAR ENGINEERING RESEARCH &DESIGN INSTITUTE CO., LTD.;JIANGXI TIANHONG TECHNOLOGY CO., LTD.;
- 특허번호 :
- IPC : C30B-031/20(2006.01);C30B-029/06(2006.01);