An optoelectronic device includes a first semiconductor die, having first and second surfaces and including a first array of transceiver elements. Each transceiver element includes an optical transducer, which directs outgoing coherent optical radiation through the first surface toward a target and to receive incoming optical radiation that has been reflected from the target. A single-photon optical detector outputs electrical pulses in response to photons of the incoming optical radiation. A waveguide conveys the incoming optical radiation from the optical transducer to the single-photon optical detector. A second semiconductor die is bonded to the second surface of the first semiconductor die and includes a second array of logic circuits, which are coupled to receive and process the electrical pulses output by the single-photon optical detectors in corresponding ones of the transceiver elements.

• 출원번호 : 18778986
• 출원인 : Mandai, Shingo
• 특허번호 :
• IPC : H01L-025/16(2006.01);G01S-017/34(2006.01);G02B-006/12(2006.01);G02B-006/42(2006.01);G02B-006/43(2006.01);H01L-023/00(2006.01);H01L-027/144(2006.01);H01L-031/02(2006.01);H01L-031/0232(2006.01);H01L-031/107(2006.01);H01S-005/026(2006.01);H01S-005/183(2006.01);

An electrokinetic device is configured as a dynamic lens cover and/or filter for an imaging assembly, e.g., of a mobile device, to selectively allow electromagnetic radiation to pass through a lens of the imaging assembly when the dynamic lens cover is in a first operating state or to prevent electromagnetic radiation from reaching the lens of the imaging assembly when the dynamic lens cover is in a second operating state. The electrokinetic device includes transparent first and second substrates, and a compaction trench surrounding the lens of the imaging assembly. The compaction trench stores pigment when the dynamic lens cover is in the first operating state. In the second operating state pigment is dispersed within a carrier fluid between the first and second substrates.

• 출원번호 : 18779070
• 출원인 : Abbott, James E.
• 특허번호 :
• IPC : G02F-001/17(2006.01);H04M-001/02(2006.01);H04N-023/55(2006.01);H04N-023/57(2006.01);

Light-emitting device (1) includes waveguide structure (5) and exterior part (4). Waveguide structure (5) includes light receiving surface (51) including incident end surface (31) and first surface (41), and radiation surface (52) including emission end surface (32) and second surface (42). A position of waveguide structure (5) with respect to light source (2) is determined to cause light (L1) to be incident on light receiving surface (51). Incident range (R) on which light (L1) is incident on light receiving surface (51) includes at least a part of incident end surface (31) and at least a part of first surface (41) such that a part of light (L1) is incident on incident end surface (31) and another part of light (L1) is incident on first surface (41), passes through exterior part (4), and is emitted from second surface (42).

• 출원번호 : 18779051
• 출원인 : NISHIKAWA, YUKIO
• 특허번호 :
• IPC : H01S-005/02253(2006.01)

The present disclosure relates to an integrated chip including a substrate and a pixel. The pixel includes a photodetector. The photodetector is in the substrate. The integrated chip further includes a first inner trench isolation structure and an outer trench isolation structure that extend into the substrate. The first inner trench isolation structure laterally surrounds the photodetector in a first closed loop. The outer trench isolation structure laterally surrounds the first inner trench isolation structure along a boundary of the pixel in a second closed loop and is laterally separated from the first inner trench isolation structure. Further, the integrated chip includes a scattering structure that is defined, at least in part, by the first inner trench isolation structure and that is configured to increase an angle at which radiation impinges on the outer trench isolation structure.

• 출원번호 : 18778992
• 출원인 : Huang, Cheng Yu
• 특허번호 :
• IPC : H01L-027/146(2006.01);H01L-031/107(2006.01);

An antenna device for mixed beam scanning includes at least one antenna module, a plurality of active radio-frequency modules and a rotating portion. The antenna module can perform electronic scanning in a one-dimensional direction. Each of the active radio-frequency modules can enable the antenna module to form a radiation beam. The rotating portion can drive the antenna module to spin or revolve to compensate or enhance the scanning capacity of the antenna module in another dimension. Accordingly, the antenna device is capable both of electronic scanning and mechanical scanning to meet the needs for tracking different satellites and have a good scanning range of coverage while simplifying the overall structural design.

• 출원번호 : 24189829.5
• 출원인 : Strong-Wave Radio Technology Inc.
• 특허번호 :
• IPC : H01Q-003/04(2006.01);H01Q-003/08(2006.01);H01Q-003/24(2006.01);H01Q-003/26(2006.01);H01Q-003/30(2006.01);H01Q-015/04(2006.01);H01Q-019/06(2006.01);H01Q-021/28(2006.01);H01Q-015/08(2006.01);H01Q-021/06(2006.01);

The present invention provides improved, methods to treat glioblastoma, including newly diagnosed glioblastoma (ndGBM) and recurrent glioblastoma (rGBM), in a human comprising administration to the patient of a chimeric poliovirus construct comprising a Sabin type I strain of poliovirus with a human rhinovirus 2 (HRV2) internal ribosome entry site (IRES) in the poliovirus 5' untranslated region between the poliovirus cloverleaf and the poliovirus open reading frame (a "chimeric poliovirus") by cervical perilymphatic subcutaneous injection, convection enhanced delivery (CED), direct intracavitary infusion via an Ommaya reservoir inserted into the surgical cavity, injection into the glioblastoma lesion cavity wall, or a combination thereof As provided herein, the chimeric poliovims is administered in a specifically-timed treatment regime comprising a treatment phases as a first-line treatment preceding the current standard of care glioblastoma therapy of maximum surgical resection, radiation, and temozolomide.

• 출원번호 : US2024/038857
• 출원인 : ISTARI ONCOLOGY, INC.;DUKE UNIVERSITY;
• 특허번호 :
• IPC : A61K-035/768(2015.01);A61K-039/13(2006.01);A61P-035/00(2006.01);A61K-031/495(2006.01);

The invention relates to a method for controlling a forming unit of a facility for manufacturing containers by forming, in particular by stretch blow-moulding, preforms made of thermoplastic material. The preforms pass through a thermal conditioning unit in which the preforms are exposed to heating electromagnetic radiation, and a forming unit in which each preform is placed in a mould of a blow-moulding station. The preform is then subjected to a stretching force by an elongation rod and to at least one pressure of a forming fluid. The method comprises at least the following steps: a first step (E1) of measuring the absorption spectrum and/or the emission spectrum of a wall of the preform before entering the forming unit; a second step (E2) of determining at least one blow-moulding parameter based on the measurement of the absorption spectrum and/or the emission spectrum from the first step (E1); a third step (E3) of application, in which the blow-moulding parameter is applied to the blow-moulding station.

• 출원번호 : EP2024/070630
• 출원인 : SIDEL PARTICIPATIONS
• 특허번호 :
• IPC : B29C-049/78(2006.01);B29C-049/64(2006.01);B29C-049/12(2006.01);B29C-049/36(2006.01);B29C-049/02(2006.01);B29K-067/00(2006.01);B29K-105/00(2006.01);B29K-105/26(2006.01);B29L-031/40(2006.01);B29L-031/00(2006.01);B29C-049/68(2006.01);

An organotin photoresist composition and a method of forming photolithography pattern are described. The organotin photoresist composition comprises a bridged-(stannocenyl)tin compound, a solvent, and/or an additive. Stannocenyl comprises bis(cyclopentadienyl)tin, or substituted bis(cyclopentadienyl)tin, wherein cyclopentadienyl is cyclopentadienyl CH group, or substituted cyclopentadienyl CHR, CHR, CHR, or CR group. A method of forming the pattern comprises: depositing bridged-(stannocenyl)tin compound photoresist over a substrate to form a photoresist layer, exposing the photoresist layer to actinic radiation to form a latent pattern, and then developing to form photolithography pattern.

• 출원번호 : US2024/038785
• 출원인 : LU, Feng
• 특허번호 :
• IPC : G03F-007/004(2006.01);G03F-007/20(2006.01);G03F-007/32(2006.01);C07F-007/22(2006.01);

A method of additive manufacturing of a three-dimensional object, comprises: dispensing from a first array of nozzles a modeling material formulation containing a polyimide precursor to form a layer in a configured pattern corresponding to a shape of a slice of the object; applying to the layer ultraviolet radiation and infrared radiation from two different radiation sources; and repeating the dispensing and the application of radiation to form a plurality of layers in configured patterns corresponding to shapes of other slices of the object. Optionally, an additional modeling material formulation or a support material formulation is dispensed from a second array of nozzles.

• 출원번호 : 18777593
• 출원인 : Stratasys Ltd.
• 특허번호 :
• IPC : B29C-064/129(2006.01);B29C-064/209(2006.01);B29C-064/277(2006.01);B29C-064/393(2006.01);B29K-079/00(2006.01);B33Y-010/00(2006.01);B33Y-030/00(2006.01);B33Y-050/02(2006.01);C08G-073/12(2006.01);

An information processing device according to an embodiment of the present disclosure includes one or more memories storing instructions and one or more processors that, upon execution of the stored instructions, are configured to operate as: a display control unit configured to, upon receiving an instruction for acquiring a first radiation image, control a display unit such that a second radiation image is displayed first and then the first radiation image is displayed. The first radiation image is obtained by performing first image processing upon a radiation image obtained by detecting a radiation. The second radiation image is obtained by performing second image processing requiring a shorter processing time than the first image processing upon the radiation image.

• 출원번호 : 18778253
• 출원인 : YAMADA, DAISUKE
• 특허번호 :
• IPC : A61B-006/46(2006.01);A61B-006/00(2006.01);A61B-006/42(2006.01);G01T-001/24(2006.01);G06T-003/40(2006.01);G06T-005/60(2006.01);G06T-005/70(2006.01);G06T-007/00(2006.01);