The invention relates to a process for fabricating a device (1) based on crystalline SiC, and preferably monocrystalline SiC, the process combining: - using a buffer layer (3) that is specific, because of its refractory and inert aspects with respect to temperature and because its crystalline properties are close to those of SiC, to grow the device (1), and - performing laser lift off on the device (1) via sacrifice of the buffer layer (3), the latter having a thickness allowing functional absorption of laser lift-off radiation while remaining thin enough not to exhibit dislocations liable to propagate into the device (1) during its growth. Thermal budget is decreased, with respect to known methods, and the integrity of the device (1) is better preserved, at least relative to what would be observed if a thermal anneal, for example at a temperature above 400°C, were applied to lift off the device (1).
- 출원번호 : EP2024/065392
- 출원인 : COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- 특허번호 :
- IPC : C30B-025/18(2006.01);C30B-029/36(2006.01);C30B-033/06(2006.01);H01L-021/762(2006.01);