An object of the present invention is to provide a pattern forming method with which a pattern excellent in terms of critical resolution and the in-plane evenness of resolution may be formed. Another object of the present invention is to provide a method for producing an electronic device in which the pattern forming method is used. A pattern forming method according to the present invention is a pattern forming method including a step 1 of forming a resist film on a substrate with an actinic ray- or radiation-sensitive resin composition including a resin X, a molecular weight of the resin X reducing as a result of a backbone of the resin X being broken by an action of exposure, an acid, or a base, a step 2 of exposing the resist film to light, and a step 3 of developing the resist film with a developer including an organic solvent to remove an exposed portion to form a pattern. The pattern forming method may further include a step 4 of cleaning the pattern using a rinse liquid including an organic solvent subsequent to the step 3. In the case where the pattern forming method does not include the step 4 subsequent to the step 3, the developer is a chemical solution including two or more types of organic solvents. In the case where the pattern forming method includes the step 4 subsequent to the step 3, at least one of the developer or the rinse liquid is a chemical solution including two or more types of organic solvents. The chemical solution including two or more types of organic solvents includes at least an organic solvent having a boiling point of 100° C. or more.
- 출원번호 : 18925335
- 출원인 : FUJIFILM Corporation
- 특허번호 :
- IPC : G03F-007/32(2006.01);G03F-007/038(2006.01);