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  • 505594

    us

    A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, including combining a first precursor and a second precursor in a vapor state to form a photoresist material, and depositing the photoresist material over the substrate. A protective layer is formed over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation through the protective layer to form a latent pattern in the photoresist layer. The protective layer is removed, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.
    • 출원번호 : 18785179
    • 출원인 : Taiwan Semiconductor Manufacturing Company, Ltd.
    • 특허번호 :
    • IPC : G03F-007/004(2006.01);G03F-007/00(2006.01);H01L-021/033(2006.01);
  • 505593

    us

    An exposure tool is configured to remove contaminants and/or prevent contamination of mirrors and/or other optical components included in the exposure tool. In some implementations, the exposure tool is configured to flush and/or otherwise remove contaminants from an illuminator, a projection optics box, and/or one or more other subsystems of the exposure tool using a heated gas such as ozone (O3) or extra clean dry air (XCDA), among other examples. In some implementations, the exposure tool is configured to provide a gas curtain (or gas wall) that includes hydrogen (H2) or another type of gas to reduce the likelihood of contaminants reaching the mirrors included in the exposure tool. In this way, the mirrors and one or more other components of the exposure tool are cleaned and maintained in a clean environment in which radiation absorbing contaminants are controlled to increase the performance of the exposure tool.
    • 출원번호 : 18785022
    • 출원인 : CHANG, Kai-Chieh
    • 특허번호 :
    • IPC : G03F-007/00(2006.01);G02B-005/08(2006.01);
  • 505592

    us

    An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. A deformable mirror is disposed in a path of the excitation laser. A controller is configured to adjust parameters of the excitation laser by controlling the deformable mirror based on a feedback parameter.
    • 출원번호 : 18784525
    • 출원인 : Taiwan Semiconductor Manufacturing Company, Ltd.
    • 특허번호 :
    • IPC : H05G-002/00(2006.01);G02B-007/185(2006.01);G02B-026/06(2006.01);G02B-026/08(2006.01);G02B-027/09(2006.01);G03F-007/00(2006.01);
  • 505591

    us

    A method for treating a tumor, comprising identifying a tumor as a glioblastoma tumor and implanting in the tumor identified as a glioblastoma tumor, as least one diffusing alpha-emitter radiation therapy (DaRT) source with a suitable radon release rate and for a given duration, such that the source provides during the given duration a cumulated activity of released radon between 6.5 Mega becquerel (MBq) hour and 14.3 MBq hour, per centimeter length.
    • 출원번호 : 18783457
    • 출원인 : Kelson, Itzhak
    • 특허번호 :
    • IPC : A61N-005/10(2006.01)
  • 505590

    us

    A method for treating a tumor, comprising identifying a tumor as a colorectal cancer tumor and implanting in the tumor identified as a colorectal cancer tumor, as least one diffusing alpha-emitter radiation therapy (DaRT) source with a suitable radon release rate and for a given duration, such that the source provides during the given duration a cumulated activity of released radon between 3.7 Mega becquerel (MBq) hour and 9.2 MBq hour, per centimeter length.
    • 출원번호 : 18783445
    • 출원인 : Kelson, Itzhak
    • 특허번호 :
    • IPC : A61N-005/10(2006.01)
  • 505589

    us

    A cold storage material of an embodiment includes a rare earth oxysulfide containing a rare earth element, a garnet-type rare earth oxide containing a rare earth element and Al, and an aluminum oxide, and a ratio of X-ray diffraction peak intensity of the garnet-type rare earth oxide to X-ray diffraction peak intensity of the rare earth oxysulfide is 0.1% or more and 40% or less.
    • 출원번호 : 18784577
    • 출원인 : KABUSHIKI KAISHA TOSHIBA
    • 특허번호 :
    • IPC : C09K-005/14(2006.01);C01F-017/294(2006.01);F25D-003/00(2006.01);
  • 505588

    us

    A method for treating a tumor, comprising identifying a tumor as a pancreatic cancer tumor and implanting in the tumor identified as a pancreatic cancer tumor, as least one diffusing alpha-emitter radiation therapy (DaRT) source (21) with a suitable radon release rate and for a given duration, such that the source (21) provides during the given duration a cumulated activity of released radon between 5.6 Mega becquerel (MBq) hour and 11.6 MBq hour, per centimeter length.
    • 출원번호 : 18783450
    • 출원인 : Kelson, Itzhak
    • 특허번호 :
    • IPC : A61N-005/10(2006.01)
  • 505587

    us

    A method for treating a tumor, comprising identifying a tumor as a breast cancer tumor and implanting in the tumor identified as a breast cancer tumor, as least one diffusing alpha-emitter radiation therapy (DaRT) source with a suitable radon release rate and for a given duration, such that the source provides during the given duration a cumulated activity of released radon between 3.5 Mega becquerel (MBq) hour and 9 MBq hour, per centimeter length.
    • 출원번호 : 18783462
    • 출원인 : Kelson, Itzhak
    • 특허번호 :
    • IPC : A61N-005/10(2006.01)
  • 505586

    us

    A method for treating a tumor, comprising identifying a tumor as a melanoma tumor and implanting in the tumor identified as a melanoma tumor, as least one diffusing alpha-emitter radiation therapy (DaRT) source with a suitable radon release rate and for a given duration, such that the source provides during the given duration a cumulated activity of released radon between 3.2 Mega becquerel (MBq) hour and 7.5 MBq hour, per centimeter length.
    • 출원번호 : 18783468
    • 출원인 : Kelson, Itzhak
    • 특허번호 :
    • IPC : A61N-005/10(2006.01)
  • 505585

    us

    Provided herein is a method of reducing or preventing sunburn caused from visible and ultraviolet radiation in a subject, the method comprising topically applying to the subject a sunscreen composition comprising inorganic UV filtering agents, antioxidants, and at least one inorganic pigment, wherein the at least one inorganic pigments and antioxidants are present in an amount effective to reduce or prevent sunburn caused from visible light. Also provided herein are sunscreen compositions and methods of increasing the SPF of a sunscreen composition that comprises at least one inorganic UV filtering agent.
    • 출원번호 : 18784316
    • 출원인 : DOC MARTIN'S OF MAUI
    • 특허번호 :
    • IPC : A61K-008/27(2006.01);A61K-008/29(2006.01);A61K-008/67(2006.01);A61Q-017/04(2006.01);