The present disclosure relates to an image sensor having a photodiode surrounded by a back-side deep trench isolation (BDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within an image sensing die and respectively comprises a photodiode configured to convert radiation into an electrical signal. The photodiode comprises a photodiode doping column with a first doping type surrounded by a photodiode doping layer with a second doping type that is different than the first doping type. A BDTI structure is disposed between adjacent pixel regions and extending from the back-side of the image sensor die to a position within the photodiode doping layer. The BDTI structure comprises a doped liner with the second doping type and a dielectric fill layer. The doped liner lines a sidewall surface of the dielectric fill layer.

• 출원번호 : 18782118
• 출원인 : Cheng, Yu-Hung
• 특허번호 :
• IPC : H01L-027/146(2006.01)

In an exemplary embodiment, a phototherapy device capable of delivering natural sunlight to a subject is provided. The phototherapy device includes a bassinet configured to hold a subject for treatment, an angular non-domed enclosure having an angled front wall and made from a flexible, transparent material connected to the incubator to create a space therein, and in some embodiments a support for supporting the bassinet. The enclosure formed around the bassinet allows visible sunlight to enter the enclosure in any direction for treating the subject while partially filtering ultraviolet (UV) and infrared radiation (IR) rays of the visible sunlight from entering the device, and is configured to direct incident IR rays out of the enclosure such that there is no build-up of heat that would harm the subject resting therein.

• 출원번호 : 18782346
• 출원인 : MARTIN, Jessi
• 특허번호 :
• IPC : A61N-005/06(2006.01);A61G-011/00(2006.01);

A method of forming a semiconductor device includes removing a light-sensitive material from a workpiece utilizing polarized electromagnetic radiation and annealing features on the workpiece utilizing electromagnetic radiation polarized in a different direction than the polarized electromagnetic radiation utilized to remove the light-sensitive material. In some embodiments, the electromagnetic radiation used to anneal the features on the workpiece is not polarized. In some described embodiments, light-sensitive material removed from the workpiece is exhausted from the chamber in which the light-sensitive removal process is carried out before it can deposit on surfaces of the chamber.

• 출원번호 : 18783347
• 출원인 : CHEN, Tz-Shian
• 특허번호 :
• IPC : H01L-021/027(2006.01)

A semiconductor arrangement is provided. The semiconductor arrangement includes a first photodiode in a substrate. The semiconductor arrangement includes a lens array over the substrate. A first plurality of lenses of the lens array overlies the first photodiode. Radiation incident upon the first plurality of lenses is directed by the first plurality of lenses to the first photodiode.

• 출원번호 : 18782107
• 출원인 : HSIEH, Feng-Chien
• 특허번호 :
• IPC : H01L-027/146(2006.01)

A method for manufacturing a semiconductor device includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a patterned photoresist. The photoresist composition includes a photoactive compound and a resin comprising a radical-active functional group and an acid labile group.

• 출원번호 : 18782565
• 출원인 : Taiwan Semiconductor Manufacturing Company, Ltd.
• 특허번호 :
• IPC : G03F-007/038(2006.01);C08L-025/08(2006.01);C08L-033/10(2006.01);C08L-033/16(2006.01);G03F-007/004(2006.01);G03F-007/027(2006.01);G03F-007/16(2006.01);G03F-007/20(2006.01);G03F-007/40(2006.01);

A radiation-sensitive resin composition includes: a polymer including a first structural unit represented by formula (1), solubility of the polymer in a developer solution capable of being altered by an acid; and a compound represented by formula (2). R1 represents a hydrogen atom, or the like; R2 represents a group obtained by removing, from a substituted or unsubstituted aliphatic hydrocarbon ring having 3 to 30 ring atoms, two hydrogen atoms; and Ar1 represents a group obtained by removing one hydrogen atom from a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 30 ring atoms. Z represents an acid-labile group; L1 represents *—O—CO— or —O—; Y represents an organic group having 1 to 30 carbon atoms, the organic group not comprising a cyclic acetal structure; A− represents a monovalent anion group; n is an integer of 1 to 5; and X+ represents a monovalent radiation-sensitive onium cation.

• 출원번호 : 18782428
• 출원인 : JSR CORPORATION
• 특허번호 :
• IPC : G03F-007/039(2006.01);G03F-007/004(2006.01);G03F-007/16(2006.01);

A testing device for testing an antenna is provided. The testing device includes a housing, an antenna module for holding the antenna and disposed under the housing, and a receiving module disposed on the housing. The receiving module includes a substrate, a coupling radiation element disposed on the substrate, and a support disposed on the substrate. The coupling radiation element includes a coupling portion and a first branch connecting to the coupling portion.

• 출원번호 : 18782753
• 출원인 : LAI, Chi-Chang
• 특허번호 :
• IPC : G01R-029/10(2006.01);G01R-031/28(2006.01);

Some embodiments relate to a CMOS image sensor disposed on a substrate. A plurality of pixel regions comprising a plurality of photodiodes, respectively, are configured to receive radiation that enters a back-side of the substrate. A boundary deep trench isolation (BDTI) structure is disposed at boundary regions of the pixel regions, and includes a first set of BDTI segments extending in a first direction and a second set of BDTI segments extending in a second direction perpendicular to the first direction to laterally surround the photodiode. The BDTI structure comprises a first material. A pixel deep trench isolation (PDTI) structure is disposed within the BDTI structure and overlies the photodiode. The PDTI structure comprises a second material that differs from the first material, and includes a first PDTI segment extending in the first direction such that the first PDTI segment is surrounded by the BDTI structure.

• 출원번호 : 18782128
• 출원인 : Huang, Cheng Yu
• 특허번호 :
• IPC : H01L-027/146(2006.01)

A method of forming a semiconductor device includes removing a light-sensitive material from a workpiece utilizing polarized electromagnetic radiation and annealing features on the workpiece utilizing electromagnetic radiation polarized in a different direction than the polarized electromagnetic radiation utilized to remove the light-sensitive material. In some embodiments, the electromagnetic radiation used to anneal the features on the workpiece is not polarized. In some described embodiments, light-sensitive material removed from the workpiece is exhausted from the chamber in which the light-sensitive removal process is carried out before it can deposit on surfaces of the chamber.

• 출원번호 : 18783350
• 출원인 : CHEN, Tz-Shian
• 특허번호 :
• IPC : H01L-021/027(2006.01)

A transportable, resilient, high frequency system with a compact footprint is provided. The system may include a plurality of antenna elements arranged around a circle. A circular array provides a resilient radiation pattern that does not change based on the number of antennas in the array and is tolerant of errors in antenna placement. The gain of the system may be increased by increasing the number of antenna elements in the array to compensate for reduced efficiency of antenna elements having a radiating element with a length of less than half the wavelength of an operating frequency of the array.

• 출원번호 : 18782920
• 출원인 : The MITRE Corporation
• 특허번호 :
• IPC : H01Q-021/20(2006.01);H01Q-003/28(2006.01);H01Q-021/26(2006.01);H01Q-021/29(2006.01);