A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate. A first precursor and a second precursor are combined. The first precursor is an organometallic having a formula: MaRbXc, where M is one or more of Sn, Bi, Sb, In, and Te, R is one or more of a C7-C11 aralkyl group, a C3-C10 cycloalkyl group, a C2-C10 alkoxy group, and a C2-C10 alkylamino group, X is one or more of a halogen, a sulfonate group, and an alkylamino group, and 1≤a≤2, b≥1, c≥1, and b+c≤4, and the second precursor is one or more of water, an amine, a borane, and a phosphine. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer to the selectively exposed photoresist layer.
- 출원번호 : 19005512
- 출원인 : Taiwan Semiconductor Manufacturing Company, Ltd.
- 특허번호 :
- IPC : G03F-007/004(2006.01);C23C-016/455(2006.01);C23C-016/56(2006.01);G03F-007/16(2006.01);G03F-007/20(2006.01);G03F-007/38(2006.01);H01L-021/027(2006.01);