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  • 505574

    us

    A method according to the present disclosure includes providing a substrate, depositing an underlayer over the substrate, depositing a photoresist layer over the underlayer, exposing a portion of the photoresist layer and a portion of the underlayer to a radiation source according to a pattern, baking the photoresist layer and underlayer, and developing the exposed portion of the photoresist layer to transfer the pattern to the photoresist layer. The underlayer includes a polymer backbone, a polarity switchable group, a cross-linkable group bonded to the polymer backbone, and photoacid generator. The polarity switchable group includes a first end group bonded to the polymer backbone, a second end group including fluorine, and an acid labile group bonded between the first end group and the second end group. The exposing decomposes the photoacid generator to generate an acidity moiety that detaches the second end group from the polymer backbone during the baking.
    • 출원번호 : 18780878
    • 출원인 : Chen, Chien-Chih
    • 특허번호 :
    • IPC : G03F-007/09(2006.01);C09D-005/00(2006.01);C09D-165/00(2006.01);G03F-007/038(2006.01);G03F-007/039(2006.01);G03F-007/11(2006.01);G03F-007/16(2006.01);G03F-007/20(2006.01);G03F-007/32(2006.01);G03F-007/38(2006.01);
  • 505573

    us

    Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Photoresist layer is selectively exposed to radiation, and selectively exposed photoresist layer developed. Photoresist composition includes photoactive compound, crosslinker, copolymer. The copolymer is A1 and A2 are independently direct link, C6-C15 phenyl group, C7-C15 benzyl group, C1-C15 alkyl group, C3-C15 cycloalkyl group, C1-C15 hydroxyalkyl group, C2-C15 alkoxy group, C3-C15 alkoxy alkyl group, C2-C15 acetyl group, C3-C15 acetyl alkyl group, C1-C15 carboxyl group, C2-C15 alkyl carboxyl group, C4-C15 cycloalkyl carboxyl group, C3-C15 saturated or unsaturated hydrocarbon ring, C2-C15 hetero chain, C3-C15 heterocyclic ring, or three dimensional ring structure; R1 is thermal or acid labile group including C4-C15 alkyl, cycloalkyl, hydroxyalkyl, alkoxy, or alkoxy alkyl group, or three dimensional ring structure; R2 is substituted or unsubstituted C4-C10 cycloalkyl group; Ra and Rb are independently H or CH3; and 0x/(x+y)1 and 0y/(x+y)1.
    • 출원번호 : 18781118
    • 출원인 : Taiwan Semiconductor Manufacturing Company, Ltd.
    • 특허번호 :
    • IPC : C08L-025/14(2006.01);C08L-033/08(2006.01);C08L-033/14(2006.01);G03F-007/004(2006.01);G03F-007/038(2006.01);G03F-007/20(2006.01);G03F-007/40(2006.01);
  • 505572

    us

    The present disclosure relates to an image sensor having a photodiode surrounded by a back-side deep trench isolation (BDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within an image sensing die and respectively comprises a photodiode configured to convert radiation into an electrical signal. The photodiode comprises a photodiode doping column with a first doping type surrounded by a photodiode doping layer with a second doping type that is different than the first doping type. A BDTI structure is disposed between adjacent pixel regions and extending from the back-side of the image sensor die to a position within the photodiode doping layer. The BDTI structure comprises a doped liner with the second doping type and a dielectric fill layer. The doped liner lines a sidewall surface of the dielectric fill layer.
    • 출원번호 : 18781081
    • 출원인 : Wu, Cheng-Ta
    • 특허번호 :
    • IPC : H01L-027/146(2006.01)
  • 505571

    us

    A method for treating a cancerous tumor, by implanting in the cancerous tumor at least one diffusing alpha-emitter radiation therapy (DaRT) source with a suitable radon release rate and for a given duration, such that the source provides during the given duration a cumulated activity of released radon of at least 10 Mega becquerel (MBq) hour, per centimeter length. Optionally, the sources are implanted in an array of sources, each source separated from its neighboring sources in the array by not more than 4.5 millimeters.
    • 출원번호 : 18780589
    • 출원인 : Kelson, Itzhak
    • 특허번호 :
    • IPC : A61N-005/10(2006.01)
  • 505570

    us

    A radiation facility including a radiation assembly, preferably for irradiating a patient is provided. The radiation assembly includes a radiation device and a moveable radiation device gantry whereupon the radiation device is mounted. The radiation device includes an accelerator and a projector for irradiating patients. The radiation assembly is movable relative to multiple patient preparation rooms.
    • 출원번호 : 18781768
    • 출원인 : ITREC B.V.
    • 특허번호 :
    • IPC : A61N-005/10(2006.01)
  • 505569

    us

    A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. An array of sensors sense the extreme ultraviolet radiation and charged particles emitted by the droplets. A control system analyses sensor signals from the sensors and adjusts plasma generation parameters responsive to the sensor signals.
    • 출원번호 : 18781567
    • 출원인 : CHEN, Tai-Yu
    • 특허번호 :
    • IPC : G03F-007/00(2006.01);G21K-001/06(2006.01);H05G-002/00(2006.01);
  • 505568

    us

    A system includes a wedge and an optical unit mounted on the wedge such that the optical unit is directed obliquely upward. The optical unit includes a radiation source. A controller is configured to treat an eye of a patient by causing the radiation source to irradiate respective target regions of the eye with a plurality of treatment beams while the eye gazes obliquely downward toward the optical unit.
    • 출원번호 : 18780546
    • 출원인 : Sacks, Zachary
    • 특허번호 :
    • IPC : A61F-009/008(2006.01);A61B-090/00(2006.01);A61F-009/007(2006.01);
  • 505567

    us

    A dry storage systems for radioactive nuclear waste materials may include a double-walled canister system. The canister system may include a canister having a tubular inner shell defining an internal cavity for storing nuclear waste material, a first lid sealably welded to a first end of the inner shell, a primary base plate defining a peripheral edge portion and having an annular closure flange, and an annular full thickness butt weld formed at an abutment joint between the annular closure flange and a second end of the inner shell. The inner shell, first lid, and first end closure may collectively define a sealed primary pressure retention barrier. A tubular outer shell may adjoin the inner shell. The outer shell may be welded to the canister to form a hermetically sealed secondary pressure retention barrier.
    • 출원번호 : 18780814
    • 출원인 : SINGH, Krishna P.
    • 특허번호 :
    • IPC : G21F-005/12(2006.01);B23K-005/02(2006.01);G21F-005/005(2006.01);G21F-005/012(2006.01);G21F-005/10(2006.01);G21F-009/34(2006.01);G21F-009/36(2006.01);
  • 505566

    us

    Described herein, are methods for providing a protective coating to a storage container for storing nuclear material, the method comprising depositing nickel particles on at least one surface of the substrate to produce the protective coating, wherein the nickel particles are deposited by cold spraying a composition comprising nickel particles and a carrier gas comprising nitrogen. In one aspect, the carrier gas consists essentially or consists only of nitrogen. The methods do not require pretreatment or modification of the nickel particles prior to cold spraying, which makes the methods described herein economically practical. The coatings produced by the methods described herein possess several advantageous properties including, but not limited to, high adhesion strength to the storage system and low porosity. The coatings produced by the methods described herein are effective against chemical attack such as, for example, CISCC.
    • 출원번호 : 18779178
    • 출원인 : Wellwood, Jay G.
    • 특허번호 :
    • IPC : B05D-001/12(2006.01);B05B-007/14(2006.01);C23C-024/04(2006.01);
  • 505565

    us

    This document describes radiation channels filled with a dielectric using a surface with a pattern of radiation elements to allow electromagnetic energy to enter or escape the dielectric. An absorption channel is paired with the radiation channel. The absorption channel is loaded with an absorber material to allow for a transfer of electromagnetic energy between the radiation channels and the respective absorption channel. A surface of each of the absorption channels has a pattern of absorbing elements that allows the electromagnetic energy that enters or exits the dielectric to be absorbed by the absorber material.
    • 출원번호 : 18780049
    • 출원인 : Aptiv Technologies AG
    • 특허번호 :
    • IPC : H01Q-021/00(2006.01);G01S-013/931(2006.01);H01Q-001/32(2006.01);H01Q-001/52(2006.01);H01Q-021/06(2006.01);