The invention relates to a method for producing a plurality of semiconductor laser chips, comprising the following steps: - providing an epitaxial semiconductor layer sequence (2) having an active layer (5), which is configured to generate electromagnetic radiation, on a growth substrate (1), wherein the active layer (5) is arranged between a first semiconductor layer (3) and a second semiconductor layer (4), - generating a photonic layer (9) with a photonic crystal (10) in the first/second semiconductor layer (3, 4), - generating recesses (7) starting from a main face of the epitaxial semiconductor layer sequence (2), wherein the recesses (7) penetrate the active layer (5), - applying a plurality of first contact points (13) in the recesses (7), said contact points electrically contacting the first semiconductor layer (3), and applying a plurality of second contact points (14) over or on the first main face of the epitaxial semiconductor layer sequence (2), said contact points electrically contacting the second semiconductor layer (4). The invention also relates to a semiconductor laser chip, to a method for producing a laser component and to a laser component.
- 출원번호 : EP2024/065901
- 출원인 : AMS-OSRAM INTERNATIONAL GMBH
- 특허번호 :
- IPC : H01S-005/0234(2021.01);H01S-005/11(2021.01);H01S-005/187(2006.01);H01S-005/02(2006.01);H01S-005/20(2006.01);H01S-005/323(2006.01);H01S-005/042(2006.01);