The chemically amplified resist composition is excellent in LWR and resolution and can prevent a resist pattern from collapsing in photolithography using high-energy radiation, such as far ultraviolet lithography, EUV lithography, and electron beam (EB) lithography, an onium salt for use therein. The chemically amplified resist composition can form a pattern by using it. The onium salt has the following formula (1).

• 출원번호 : 18795308
• 출원인 : Shin-Etsu Chemical Co., Ltd.
• 특허번호 :
• IPC : G03F-007/004(2006.01);G03F-007/038(2006.01);G03F-007/039(2006.01);

The invention relates to an interventional system comprising an introduction element like a catheter for being introduced into an object, for instance, a person. A moving unit like a robot moves the introduction element within the object, wherein a tracking image generating unit generates tracking images of the introduction element within the object and wherein a controller controls the tracking image generating unit depending on movement parameters of the moving unit, which are indicative of the movement, such that the tracking images show the introduction element. This control can be performed very accurately based on the known real physical movement of the introduction element such that it is not necessary to, for instance, irradiate a relatively large area of the object for ensuring that the introduction element is really captured by the tracking images, thereby allowing for a reduced radiation dose applied to the object.

• 출원번호 : 18795287
• 출원인 : VAN DIJK, ERIK MARTINUS HUBERTUS PETRUS
• 특허번호 :
• IPC : A61B-006/00(2006.01);A61B-006/06(2006.01);A61B-006/12(2006.01);A61B-006/50(2006.01);A61B-034/20(2006.01);A61B-034/30(2006.01);A61B-090/00(2006.01);

An image sensor (10) comprises a semiconductor substrate (100) comprising a photodiode (105) comprising a first doped portion (111) of a first conductivity type and a second doped portion (112) of a second conductivity type. The image sensor (10) further comprises a transfer gate (107) for transferring charges from the second doped portion (112) to a floating diffusion portion (108). The transfer gate (107) and the floating diffusion portion (108) are arranged at a first main surface (101) of the semiconductor substrate (100) opposite to a second main surface (102) being an incidence surface for electromagnetic radiation (15). The transfer gate (107) comprises a gate trench (114) extending from the first main surface (101) in a depth direction. The image sensor (10) further comprises a reflecting metasurface (117) at the first main surface (101) of the semiconductor substrate (100).

• 출원번호 : EP2024/072211
• 출원인 : AMS SENSORS BELGIUM BVBA
• 특허번호 :
• IPC : H01L-027/146(2006.01)

The invention relates to a device (1) for carrying out nuclear reactions comprising:- a source material comprising a first isotope, arranged in a first enclosure,- an ionization system (100) configured for ionizing the source material,- an ion accelerator configured for accelerating ions of the source material to a first target (103) arranged in a second enclosure (102) and comprising a second isotope, so as to allow a first nuclear reaction between the first and the second isotopes,- a second target (110) arranged either in the second or in a third enclosure (109), so as to allow reaction of neutrons resulting from the first nuclear reaction with atomic nuclei of the second target,the first isotope being a hydrogen isotope and the second isotope being a hydrogen isotope or a heavy isotope.

• 출원번호 : 24193187.2
• 출원인 : Sangle-Ferriere, Bruno
• 특허번호 :
• IPC : G21G-001/06(2006.01);G21G-004/02(2006.01);

PROBLEM TO BE SOLVED: To provide a flooring material which is excellent in antifouling properties and stain removability as well as in anti-slip properties.SOLUTION: Provided is a flooring material having a flooring body including a resin layer and a surface protective layer on the flooring body. The surface protective layer includes a cured product of an ionizing radiation curable resin composition, and the ionizing radiation curable resin composition includes at least one resin selected from an ionizing radiation curable silicone-modified urethane (meth)acrylate resin and an ionizing radiation curable fluorine-modified urethane (meth)acrylate resin, and anti-slip particles.SELECTED DRAWING: None

• 출원번호 : 2024129177
• 출원인 : TOLI CORP
• 특허번호 :
• IPC : E04F-015/02(2006.01);E04F-015/10(2006.01);B32B-027/30(2006.01);

An image forming method for forming an image on a substrate, includes: forming a resin layer on the substrate; adhering a transfer sheet having a sublimable dye ink layer on a surface thereof to the resin layer, the sublimable dye ink layer including a sublimable dye ink; and heating the transfer sheet to transfer the sublimable dye ink to the resin layer. Forming the resin layer includes: ejecting a resin liquid from an inkjet head to adhere the resin liquid to the substrate, the resin liquid including a resin component capable of being polymerized by ultraviolet irradiation; and polymerizing the resin component by ultraviolet radiation to form the resin layer on the substrate.

• 출원번호 : 24192772.2
• 출원인 : Brother Kogyo Kabushiki Kaisha
• 특허번호 :
• IPC : B41M-005/00(2006.01);B41M-005/035(2006.01);B41M-005/52(2006.01);

Provided are: a method for producing an actinic ray-sensitive or radiation-sensitive resin composition, said method including a step (X) for filtering an actinic ray-sensitive or radiation-sensitive resin composition containing a solvent and a resin (A) of which the main chain is decomposed by being irradiated with actinic rays or radiation, and performing the filtering by passing said composition through two or more types of filters; a pattern formation method that uses the method for producing an actinic ray-sensitive or radiation-sensitive resin composition; and a method for producing an electronic device.

• 출원번호 : JP2024/027906
• 출원인 : FUJIFILM CORPORATION
• 특허번호 :
• IPC : G03F-007/039(2006.01);B01D-061/02(2006.01);B01D-061/58(2006.01);B01D-069/00(2006.01);C08F-212/08(2006.01);C08F-212/14(2006.01);C08F-220/18(2006.01);C08F-220/22(2006.01);G03F-007/20(2006.01);

An apparatus includes a frame structure forming a circumference around an opening, a receptacle along the circumference, wherein the receptacle is configured to allow a secure placement of an optical element such that electromagnetic waves traveling from the opening impinge upon the optical element; N heating elements attached to the frame structure substantially along entirety of the circumference, where N is a positive integer; and a radiation reflector disposed along the circumference of the frame.

• 출원번호 : US2024/040972
• 출원인 : THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
• 특허번호 :
• IPC : H01S-003/04(2006.01);G02B-007/02(2021.01);G02B-007/18(2021.01);

Systems, methods, and devices for hyperspectral imaging in a light deficient environment are disclosed. A system includes an emitter for emitting pulses of electromagnetic radiation and an image sensor comprising a pixel array for sensing reflected electromagnetic radiation. The system includes a controller comprising a processor in electrical communication with the image sensor and the emitter, wherein the controller synchronizes timing of the pulses of electromagnetic radiation during a blanking period of the image sensor. The system is such that at least a portion of the pulses of electromagnetic radiation emitted by the emitter comprises one or more of electromagnetic radiation having a wavelength from about 513 nm to about 545 nm, electromagnetic radiation having a wavelength from about 565 nm to about 585 nm, or electromagnetic radiation having a wavelength from about 900 nm to about 1000 nm.

• 출원번호 : 18794469
• 출원인 : Cilag GmbH international
• 특허번호 :
• IPC : H04N-023/56(2006.01);A61B-001/00(2006.01);A61B-001/045(2006.01);A61B-001/06(2006.01);A61B-005/00(2006.01);A61B-005/027(2006.01);G06T-005/50(2006.01);G06T-011/60(2006.01);

A radiation detection array including a substrate, a dielectric layer disposed over the substrate, the dielectric layer including a radiation reactive material, a semiconductor layer disposed over the dielectric layer, a set of source/drain rows formed in the semiconductor layer, a charge storage structure disposed over the semiconductor layer, and a set of gate stacks formed over the charge storage.

• 출원번호 : 18794765
• 출원인 : Flanagan, Will
• 특허번호 :
• IPC : G01T-001/24(2006.01)