In an exemplary embodiment, a phototherapy device capable of delivering natural sunlight to a subject is provided. The phototherapy device includes a bassinet configured to hold a subject for treatment, an angular non-domed enclosure having an angled front wall and made from a flexible, transparent material connected to the incubator to create a space therein, and in some embodiments a support for supporting the bassinet. The enclosure formed around the bassinet allows visible sunlight to enter the enclosure in any direction for treating the subject while partially filtering ultraviolet (UV) and infrared radiation (IR) rays of the visible sunlight from entering the device, and is configured to direct incident IR rays out of the enclosure such that there is no build-up of heat that would harm the subject resting therein.

• 출원번호 : 18782346
• 출원인 : MARTIN, Jessi
• 특허번호 :
• IPC : A61N-005/06(2006.01);A61G-011/00(2006.01);

A method of forming a semiconductor device includes removing a light-sensitive material from a workpiece utilizing polarized electromagnetic radiation and annealing features on the workpiece utilizing electromagnetic radiation polarized in a different direction than the polarized electromagnetic radiation utilized to remove the light-sensitive material. In some embodiments, the electromagnetic radiation used to anneal the features on the workpiece is not polarized. In some described embodiments, light-sensitive material removed from the workpiece is exhausted from the chamber in which the light-sensitive removal process is carried out before it can deposit on surfaces of the chamber.

• 출원번호 : 18783347
• 출원인 : CHEN, Tz-Shian
• 특허번호 :
• IPC : H01L-021/027(2006.01)

A semiconductor arrangement is provided. The semiconductor arrangement includes a first photodiode in a substrate. The semiconductor arrangement includes a lens array over the substrate. A first plurality of lenses of the lens array overlies the first photodiode. Radiation incident upon the first plurality of lenses is directed by the first plurality of lenses to the first photodiode.

• 출원번호 : 18782107
• 출원인 : HSIEH, Feng-Chien
• 특허번호 :
• IPC : H01L-027/146(2006.01)

Some embodiments relate to a CMOS image sensor disposed on a substrate. A plurality of pixel regions comprising a plurality of photodiodes, respectively, are configured to receive radiation that enters a back-side of the substrate. A boundary deep trench isolation (BDTI) structure is disposed at boundary regions of the pixel regions, and includes a first set of BDTI segments extending in a first direction and a second set of BDTI segments extending in a second direction perpendicular to the first direction to laterally surround the photodiode. The BDTI structure comprises a first material. A pixel deep trench isolation (PDTI) structure is disposed within the BDTI structure and overlies the photodiode. The PDTI structure comprises a second material that differs from the first material, and includes a first PDTI segment extending in the first direction such that the first PDTI segment is surrounded by the BDTI structure.

• 출원번호 : 18782128
• 출원인 : Huang, Cheng Yu
• 특허번호 :
• IPC : H01L-027/146(2006.01)

A method of forming a semiconductor device includes removing a light-sensitive material from a workpiece utilizing polarized electromagnetic radiation and annealing features on the workpiece utilizing electromagnetic radiation polarized in a different direction than the polarized electromagnetic radiation utilized to remove the light-sensitive material. In some embodiments, the electromagnetic radiation used to anneal the features on the workpiece is not polarized. In some described embodiments, light-sensitive material removed from the workpiece is exhausted from the chamber in which the light-sensitive removal process is carried out before it can deposit on surfaces of the chamber.

• 출원번호 : 18783350
• 출원인 : CHEN, Tz-Shian
• 특허번호 :
• IPC : H01L-021/027(2006.01)

A transportable, resilient, high frequency system with a compact footprint is provided. The system may include a plurality of antenna elements arranged around a circle. A circular array provides a resilient radiation pattern that does not change based on the number of antennas in the array and is tolerant of errors in antenna placement. The gain of the system may be increased by increasing the number of antenna elements in the array to compensate for reduced efficiency of antenna elements having a radiating element with a length of less than half the wavelength of an operating frequency of the array.

• 출원번호 : 18782920
• 출원인 : The MITRE Corporation
• 특허번호 :
• IPC : H01Q-021/20(2006.01);H01Q-003/28(2006.01);H01Q-021/26(2006.01);H01Q-021/29(2006.01);

A method for treating a cancerous tumor, by implanting in the cancerous tumor at least one diffusing alpha-emitter radiation therapy (DaRT) source with a suitable radon release rate and for a given duration, such that the source provides during the given duration a cumulated activity of released radon of at least 10 Mega becquerel (MBq) hour, per centimeter length. Optionally, the sources are implanted in an array of sources, each source separated from its neighboring sources in the array by not more than 4.5 millimeters.

• 출원번호 : 18780589
• 출원인 : Kelson, Itzhak
• 특허번호 :
• IPC : A61N-005/10(2006.01)

A method according to the present disclosure includes providing a substrate, depositing an underlayer over the substrate, depositing a photoresist layer over the underlayer, exposing a portion of the photoresist layer and a portion of the underlayer to a radiation source according to a pattern, baking the photoresist layer and underlayer, and developing the exposed portion of the photoresist layer to transfer the pattern to the photoresist layer. The underlayer includes a polymer backbone, a polarity switchable group, a cross-linkable group bonded to the polymer backbone, and photoacid generator. The polarity switchable group includes a first end group bonded to the polymer backbone, a second end group including fluorine, and an acid labile group bonded between the first end group and the second end group. The exposing decomposes the photoacid generator to generate an acidity moiety that detaches the second end group from the polymer backbone during the baking.

• 출원번호 : 18780878
• 출원인 : Chen, Chien-Chih
• 특허번호 :
• IPC : G03F-007/09(2006.01);C09D-005/00(2006.01);C09D-165/00(2006.01);G03F-007/038(2006.01);G03F-007/039(2006.01);G03F-007/11(2006.01);G03F-007/16(2006.01);G03F-007/20(2006.01);G03F-007/32(2006.01);G03F-007/38(2006.01);

Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Photoresist layer is selectively exposed to radiation, and selectively exposed photoresist layer developed. Photoresist composition includes photoactive compound, crosslinker, copolymer. The copolymer is A1 and A2 are independently direct link, C6-C15 phenyl group, C7-C15 benzyl group, C1-C15 alkyl group, C3-C15 cycloalkyl group, C1-C15 hydroxyalkyl group, C2-C15 alkoxy group, C3-C15 alkoxy alkyl group, C2-C15 acetyl group, C3-C15 acetyl alkyl group, C1-C15 carboxyl group, C2-C15 alkyl carboxyl group, C4-C15 cycloalkyl carboxyl group, C3-C15 saturated or unsaturated hydrocarbon ring, C2-C15 hetero chain, C3-C15 heterocyclic ring, or three dimensional ring structure; R1 is thermal or acid labile group including C4-C15 alkyl, cycloalkyl, hydroxyalkyl, alkoxy, or alkoxy alkyl group, or three dimensional ring structure; R2 is substituted or unsubstituted C4-C10 cycloalkyl group; Ra and Rb are independently H or CH3; and 0x/(x+y)1 and 0y/(x+y)1.

• 출원번호 : 18781118
• 출원인 : Taiwan Semiconductor Manufacturing Company, Ltd.
• 특허번호 :
• IPC : C08L-025/14(2006.01);C08L-033/08(2006.01);C08L-033/14(2006.01);G03F-007/004(2006.01);G03F-007/038(2006.01);G03F-007/20(2006.01);G03F-007/40(2006.01);

The present disclosure relates to an image sensor having a photodiode surrounded by a back-side deep trench isolation (BDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within an image sensing die and respectively comprises a photodiode configured to convert radiation into an electrical signal. The photodiode comprises a photodiode doping column with a first doping type surrounded by a photodiode doping layer with a second doping type that is different than the first doping type. A BDTI structure is disposed between adjacent pixel regions and extending from the back-side of the image sensor die to a position within the photodiode doping layer. The BDTI structure comprises a doped liner with the second doping type and a dielectric fill layer. The doped liner lines a sidewall surface of the dielectric fill layer.

• 출원번호 : 18781081
• 출원인 : Wu, Cheng-Ta
• 특허번호 :
• IPC : H01L-027/146(2006.01)