A method for treating a tumor, comprising identifying a tumor as a colorectal cancer tumor and implanting in the tumor identified as a colorectal cancer tumor, as least one diffusing alpha-emitter radiation therapy (DaRT) source with a suitable radon release rate and for a given duration, such that the source provides during the given duration a cumulated activity of released radon between 3.7 Mega becquerel (MBq) hour and 9.2 MBq hour, per centimeter length.

• 출원번호 : 18783445
• 출원인 : Kelson, Itzhak
• 특허번호 :
• IPC : A61N-005/10(2006.01)

A method for treating a tumor, comprising identifying a tumor as a pancreatic cancer tumor and implanting in the tumor identified as a pancreatic cancer tumor, as least one diffusing alpha-emitter radiation therapy (DaRT) source (21) with a suitable radon release rate and for a given duration, such that the source (21) provides during the given duration a cumulated activity of released radon between 5.6 Mega becquerel (MBq) hour and 11.6 MBq hour, per centimeter length.

• 출원번호 : 18783450
• 출원인 : Kelson, Itzhak
• 특허번호 :
• IPC : A61N-005/10(2006.01)

A method for treating a tumor, comprising identifying a tumor as a breast cancer tumor and implanting in the tumor identified as a breast cancer tumor, as least one diffusing alpha-emitter radiation therapy (DaRT) source with a suitable radon release rate and for a given duration, such that the source provides during the given duration a cumulated activity of released radon between 3.5 Mega becquerel (MBq) hour and 9 MBq hour, per centimeter length.

• 출원번호 : 18783462
• 출원인 : Kelson, Itzhak
• 특허번호 :
• IPC : A61N-005/10(2006.01)

A cold storage material of an embodiment includes a rare earth oxysulfide containing a rare earth element, a garnet-type rare earth oxide containing a rare earth element and Al, and an aluminum oxide, and a ratio of X-ray diffraction peak intensity of the garnet-type rare earth oxide to X-ray diffraction peak intensity of the rare earth oxysulfide is 0.1% or more and 40% or less.

• 출원번호 : 18784577
• 출원인 : KABUSHIKI KAISHA TOSHIBA
• 특허번호 :
• IPC : C09K-005/14(2006.01);C01F-017/294(2006.01);F25D-003/00(2006.01);

A method for treating a tumor, comprising identifying a tumor as a melanoma tumor and implanting in the tumor identified as a melanoma tumor, as least one diffusing alpha-emitter radiation therapy (DaRT) source with a suitable radon release rate and for a given duration, such that the source provides during the given duration a cumulated activity of released radon between 3.2 Mega becquerel (MBq) hour and 7.5 MBq hour, per centimeter length.

• 출원번호 : 18783468
• 출원인 : Kelson, Itzhak
• 특허번호 :
• IPC : A61N-005/10(2006.01)

Provided herein is a method of reducing or preventing sunburn caused from visible and ultraviolet radiation in a subject, the method comprising topically applying to the subject a sunscreen composition comprising inorganic UV filtering agents, antioxidants, and at least one inorganic pigment, wherein the at least one inorganic pigments and antioxidants are present in an amount effective to reduce or prevent sunburn caused from visible light. Also provided herein are sunscreen compositions and methods of increasing the SPF of a sunscreen composition that comprises at least one inorganic UV filtering agent.

• 출원번호 : 18784316
• 출원인 : DOC MARTIN'S OF MAUI
• 특허번호 :
• IPC : A61K-008/27(2006.01);A61K-008/29(2006.01);A61K-008/67(2006.01);A61Q-017/04(2006.01);

A radiation-sensitive resin composition includes: a polymer including a first structural unit represented by formula (1), solubility of the polymer in a developer solution capable of being altered by an acid; and a compound represented by formula (2). R1 represents a hydrogen atom, or the like; R2 represents a group obtained by removing, from a substituted or unsubstituted aliphatic hydrocarbon ring having 3 to 30 ring atoms, two hydrogen atoms; and Ar1 represents a group obtained by removing one hydrogen atom from a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 30 ring atoms. Z represents an acid-labile group; L1 represents *—O—CO— or —O—; Y represents an organic group having 1 to 30 carbon atoms, the organic group not comprising a cyclic acetal structure; A− represents a monovalent anion group; n is an integer of 1 to 5; and X+ represents a monovalent radiation-sensitive onium cation.

• 출원번호 : 18782428
• 출원인 : JSR CORPORATION
• 특허번호 :
• IPC : G03F-007/039(2006.01);G03F-007/004(2006.01);G03F-007/16(2006.01);

A method for manufacturing a semiconductor device includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a patterned photoresist. The photoresist composition includes a photoactive compound and a resin comprising a radical-active functional group and an acid labile group.

• 출원번호 : 18782565
• 출원인 : Taiwan Semiconductor Manufacturing Company, Ltd.
• 특허번호 :
• IPC : G03F-007/038(2006.01);C08L-025/08(2006.01);C08L-033/10(2006.01);C08L-033/16(2006.01);G03F-007/004(2006.01);G03F-007/027(2006.01);G03F-007/16(2006.01);G03F-007/20(2006.01);G03F-007/40(2006.01);

A testing device for testing an antenna is provided. The testing device includes a housing, an antenna module for holding the antenna and disposed under the housing, and a receiving module disposed on the housing. The receiving module includes a substrate, a coupling radiation element disposed on the substrate, and a support disposed on the substrate. The coupling radiation element includes a coupling portion and a first branch connecting to the coupling portion.

• 출원번호 : 18782753
• 출원인 : LAI, Chi-Chang
• 특허번호 :
• IPC : G01R-029/10(2006.01);G01R-031/28(2006.01);

The present disclosure relates to an image sensor having a photodiode surrounded by a back-side deep trench isolation (BDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within an image sensing die and respectively comprises a photodiode configured to convert radiation into an electrical signal. The photodiode comprises a photodiode doping column with a first doping type surrounded by a photodiode doping layer with a second doping type that is different than the first doping type. A BDTI structure is disposed between adjacent pixel regions and extending from the back-side of the image sensor die to a position within the photodiode doping layer. The BDTI structure comprises a doped liner with the second doping type and a dielectric fill layer. The doped liner lines a sidewall surface of the dielectric fill layer.

• 출원번호 : 18782118
• 출원인 : Cheng, Yu-Hung
• 특허번호 :
• IPC : H01L-027/146(2006.01)