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  • 506518

    us

    An interactive object system includes an interactive object and a source of electromagnetic radiation, e.g., an external source. A power harvesting device of the interactive object receives and harvests power from the electromagnetic radiation to power a special effect system of the interactive object. In an embodiment, the interactive object includes a retroreflective material that reflects electromagnetic radiation, which may be of a same or different wavelength as the electromagnetic radiation from which power is harvested. The interactive object system detects the reflected electromagnetic radiation, which may be used to trigger one or more additional actions related to the interactive object.
    • 출원번호 : 18787756
    • 출원인 : Yeh, Wei Cheng
    • 특허번호 :
    • IPC : G02B-005/126(2006.01);A63G-031/00(2006.01);H02J-050/00(2006.01);H04N-005/33(2006.01);
  • 506517

    us

    A method of cleaning a reticle includes applying ozone fluid over a surface of the reticle, and while the ozone fluid is over the surface of the reticle, irradiating the surface of the reticle with ultraviolet (UV) radiation for an irradiation time to treat the surface of the reticle. The method of cleaning the reticle further includes adjusting the irradiation time based on a reflected UV beam from the surface of the reticle.
    • 출원번호 : 18788007
    • 출원인 : Taiwan Semiconductor Manufacturing Company, Ltd.
    • 특허번호 :
    • IPC : G03F-007/00(2006.01)
  • 506516

    us

    A method of performing a lithography process includes providing a test pattern. The test pattern includes a first set of lines arranged at a first pitch, a second set of lines arranged at the first pitch, and further includes at least one reference line between the first set of lines and the second set of lines. The test pattern is exposed with a radiation source providing an asymmetric, monopole illumination profile to form a test pattern structure on a substrate. The test pattern structure is then measured and a measured distance correlated to an offset of a lithography parameter. A lithography process is adjusted based on the offset of the lithography parameter.
    • 출원번호 : 18787004
    • 출원인 : Lee, Chih-Jie
    • 특허번호 :
    • IPC : G03F-009/00(2006.01);G03F-007/20(2006.01);
  • 506515

    us

    A radiation device is wirelessly connected to a radiography device that generates dynamic image data and which controls sequential radiation. The radiation device includes a signal generator and a first determiner. The signal generator generates (i) first pulse signals emitted by the radiography device, (ii) second pulse signals synchronized with a first count value obtained by counting up the first pulse signals, and (iii) a second count value obtained by counting up the second pulse signals. The first determiner determines whether to start radiation based on a delay time which is a difference between a first time point count value and a second time point count value. The first time point count value indicates a time point at which a radiation permission signal is transmitted. The second time point count value indicates a time point at which the radiation permission signal is received.
    • 출원번호 : 18787201
    • 출원인 : HARA, Kentaro
    • 특허번호 :
    • IPC : A61B-006/00(2006.01);A61B-006/46(2006.01);A61G-003/00(2006.01);
  • 506514

    us

    A process for the treatment of a hydrocracking unit bottoms stream containing heavy poly-nuclear aromatic (HPNA) compounds and/or a fresh hydrocracking feedstock stream containing HPNA precursors to produce coke. The HPNA and/or HPNA precursors are removed from the hydrocracking unit bottoms stream and/or a fresh hydrocracking feedstock stream by solvent washing, and the HPNA and/or HPNA precursors are subjected to delayed coking for the production of coke.
    • 출원번호 : 18786961
    • 출원인 : SAUDI ARABIAN OIL COMPANY
    • 특허번호 :
    • IPC : C10B-057/06(2006.01);C10B-057/00(2006.01);C10B-057/04(2006.01);
  • 506513

    us

    In a pattern formation method, a photoresist layer is formed over a substrate by combining a first precursor and a second precursor in a vapor state to form a photoresist material. The first precursor is an organometallic having a formula MaRbXc, where M is one or more selected from the group consisting of Sn, Bi, Sb, In, and Te, R is an alkyl group that is substituted by different EDG and/or EWG, X is a halide or sulfonate group, and 1≤a≤2, b≥1, c≥1, and b+c≤4. The second precursor is water, an amine, a borane, and/or a phosphine. The photoresist material is deposited over the substrate, and selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.
    • 출원번호 : 18786266
    • 출원인 : Taiwan Semiconductor Manufacturing Company, Ltd.
    • 특허번호 :
    • IPC : H01L-021/027(2006.01);C23C-016/04(2006.01);C23C-016/455(2006.01);
  • 506512

    us

    A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, including combining a first precursor and a second precursor in a vapor state to form a photoresist material, and depositing the photoresist material over the substrate. A protective layer is formed over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation through the protective layer to form a latent pattern in the photoresist layer. The protective layer is removed, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.
    • 출원번호 : 18785179
    • 출원인 : Taiwan Semiconductor Manufacturing Company, Ltd.
    • 특허번호 :
    • IPC : G03F-007/004(2006.01);G03F-007/00(2006.01);H01L-021/033(2006.01);
  • 506511

    us

    An exposure tool is configured to remove contaminants and/or prevent contamination of mirrors and/or other optical components included in the exposure tool. In some implementations, the exposure tool is configured to flush and/or otherwise remove contaminants from an illuminator, a projection optics box, and/or one or more other subsystems of the exposure tool using a heated gas such as ozone (O3) or extra clean dry air (XCDA), among other examples. In some implementations, the exposure tool is configured to provide a gas curtain (or gas wall) that includes hydrogen (H2) or another type of gas to reduce the likelihood of contaminants reaching the mirrors included in the exposure tool. In this way, the mirrors and one or more other components of the exposure tool are cleaned and maintained in a clean environment in which radiation absorbing contaminants are controlled to increase the performance of the exposure tool.
    • 출원번호 : 18785022
    • 출원인 : CHANG, Kai-Chieh
    • 특허번호 :
    • IPC : G03F-007/00(2006.01);G02B-005/08(2006.01);
  • 506510

    us

    An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. A deformable mirror is disposed in a path of the excitation laser. A controller is configured to adjust parameters of the excitation laser by controlling the deformable mirror based on a feedback parameter.
    • 출원번호 : 18784525
    • 출원인 : Taiwan Semiconductor Manufacturing Company, Ltd.
    • 특허번호 :
    • IPC : H05G-002/00(2006.01);G02B-007/185(2006.01);G02B-026/06(2006.01);G02B-026/08(2006.01);G02B-027/09(2006.01);G03F-007/00(2006.01);
  • 506509

    us

    A method for treating a tumor, comprising identifying a tumor as a glioblastoma tumor and implanting in the tumor identified as a glioblastoma tumor, as least one diffusing alpha-emitter radiation therapy (DaRT) source with a suitable radon release rate and for a given duration, such that the source provides during the given duration a cumulated activity of released radon between 6.5 Mega becquerel (MBq) hour and 14.3 MBq hour, per centimeter length.
    • 출원번호 : 18783457
    • 출원인 : Kelson, Itzhak
    • 특허번호 :
    • IPC : A61N-005/10(2006.01)