A method of forming a pattern in a photoresist includes forming a photoresist layer over a substrate, and selectively exposing the photoresist layer to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer composition to the selectively exposed photoresist layer to form a pattern. The developer composition includes a first solvent, a second solvent, a surfactant, and at least one selected from an organic acid, an organic base, an inorganic acid, or an inorganic base. The first solvent and second solvent are different solvents.
- 출원번호 : 18771857
- 출원인 : Taiwan Semiconductor Manufacturing Company, Ltd.
- 특허번호 :
- IPC : H01L-021/027(2006.01);G03F-007/00(2006.01);G03F-007/11(2006.01);